IBM’s T. J. Watson Research Center is seeking candidates for a Postdoctoral Researcher position in Photonic Device Integration.
This individual will drive the development of innovative photonic integrated circuit platforms, intended for applications including high-speed optical interconnects, optical sensors, and quantum photonics.
The successful candidate will be responsible for developing and executing the integrated process flows required to build advanced photonic device structures for the above mentioned areas. Also, will collaborate with photonics device designers to plan, perform, and analyze the experiments necessary to meet the desired performance specifications. Leveraging the capabilities of the IBM Microelectronics Research Lab, this individual will also work closely with unit process owners in order to develop and validate the individual steps required for the manufacture of complex photonic integrated circuits.
The desired candidate will have advanced experience and a proven research track record in:
- Semiconductor processing, metrology, and integration focused on one or more of the following technologies: Photonic integrated circuits (Silicon or III-V based), CMOS/bipolar electronics, embedded magnetic/phase-change memory, micro-electro-mechanical systems (MEMS), micro-opto-electro-mechanical systems (MOEMS), or heterogeneous integration
- Optical and/or electrical device physics and characterization techniques
- TCAD process modeling and/or physical device design
Candidates must be self-motivated with proven communication skills, and be capable of working independently as well as within cross-disciplinary teams. A successful track record interfacing with corporate and/or government clients on technology development partnerships would also be beneficial.
A Ph.D. degree in Electrical Engineering, Physics or Materials Science is preferred.
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Semiconductor processing, metrology, and integration focused on one or more of the following technologies: Photonic integrated circuits (Silicon or III-V based), CMOS/bipolar electronics, embedded magnetic/phase-change memory, micro-electro-mechanical systems (MEMS), micro-opto-electro-mechanical systems (MOEMS), or heterogeneous integration (2 years)
Optical and/or electrical device physics (2 years)
Optical and/or electrical characterization techniques (2 years)
TCAD process modeling (1 year)
Physical device design and modeling (1 year)
Successful track record interfacing with corporate and/or government clients on technology development partnerships (1 year)